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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Pendeoepitaxy of GaN and InGaN LEDs on SiC

Pendeoepitaxy of GaN and InGaN LEDs on SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1477-1482

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1477

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Online since:

May 2000

Authors:

H.S. Kong, J. Edmond, K. Doverspike, D. Emerson, G. Bulman, K. Haberern, H. Dieringer, D. Slater

Keywords:

Epitaxy, Gallium Nitride (GaN), Light Emitting Diode (LED), Silicon Carbide (SiC)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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