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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Pendeo-EpitaxyTM Process for Aluminum Gallium...

Pendeo-Epitaxy^TM Process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1491-1494

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1491

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Online since:

May 2000

Authors:

Thomas Gehrke, Kevin J. Linthicum, Pradeep Rajagopal, Edward A. Preble, E.P. Carlson, Brian M. Robin, Robert F. Davis

Keywords:

Al_xGa_1-xN, Auger Spectroscopy, Lateral Growth, Pendeo-Epitaxy, Selective Growth, Substrate Engineering

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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