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Paper Titles
High Quality GaN on Si(111) using (AlN/GaN)x Superlattice and Maskless ELO
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Pendeo-EpitaxyTM Process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition
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Reduction of Defects on GaN and AlGaN by In-Doping in Metalorganic Vapor Phase Epitaxy
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Comparison of AlGaN and GaN Grown on Various Substrates: Step Flow Growth on LiGaO2 at Low Growth Temperature
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AlN Epitaxial Films Grown by ECR Plasma Assisted Metalorganic Chemical Vapor Deposition under Controlled Plasma Condition in Afterglow Region
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Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process
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Pulsed Laser Deposition: A Novel Growth Technique for Wide-Bandgap Semiconductor Research

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1503-1506

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1503

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Online since:

May 2000

Authors:

R.D. Vispute, R. Enck, A. Patel, Bin Ming, R.P. Sharma, T. Venkatesan, Charles Scozzie, Aivars J. Lelis, F. Barry McLean, T.S. Zheleva, Kenneth A. Jones

Keywords:

AlN Encapsulation, AlN High Temperature Dielectrics, Ga-Al-N Alloys, Ohmic Contact, Pulsed Laser Deposition (PLD), Thyristor, Titanium Nitride TiN

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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