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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Silicon Carbide Substrates for Epitaxial Growth of...

Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1515-1518

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1515

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Online since:

May 2000

Authors:

D.D. Avrov, Sergey I. Dorozhkin, Andrew O. Lebedev, V.P. Rastegaev, Yuri M. Tairov

Keywords:

Chloride-Transport Process, Defect Formation, Nitrided Stainless Steel, Sublimation Growth

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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