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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Comparison of AlGaN and GaN Grown on Various...

Comparison of AlGaN and GaN Grown on Various Substrates: Step Flow Growth on LiGaO₂ at Low Growth Temperature

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1499-1502

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1499

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Online since:

May 2000

Authors:

Sang Beom Kang, W.Alan Doolittle, Stuart R. Stock, April S. Brown

Keywords:

Atomic Force Microscope (AFM), Dislocation, LiGaO₂, Polarity, Rf-Plasma Nitrogen Source, Step Flow Growth, Surface Morphology, X-Ray Diffraction (XRD)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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