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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Reduction of Defects on GaN and AlGaN by In-Doping...

Reduction of Defects on GaN and AlGaN by In-Doping in Metalorganic Vapor Phase Epitaxy

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1495-1498

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1495

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Online since:

May 2000

Authors:

Tetsu Kachi, Kenji Itoh, Kazuyoshi Tomita, Hiroshi Tadano

Keywords:

Crack, Dislocation, In-Doping, XRC

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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