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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Comparison of Different Epitaxial Lateral...

Comparison of Different Epitaxial Lateral Overgrowth GaN Structures using SiO₂ and Tungsten Mask by Cathodoluminescence Microscopy and Micro-Raman Spectroscopy

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1483-1486

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1483

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Online since:

May 2000

Authors:

F. Bertram, T. Riemann, D. Rudloff, J. Christen, A. Kaschner, Andreas Hoffmann, K. Hiramatsu

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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