Comparison of Different Epitaxial Lateral Overgrowth GaN Structures using SiO2 and Tungsten Mask by Cathodoluminescence Microscopy and Micro-Raman Spectroscopy

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1483-1486

DOI:

10.4028/www.scientific.net/MSF.338-342.1483

Citation:

F. Bertram et al., "Comparison of Different Epitaxial Lateral Overgrowth GaN Structures using SiO2 and Tungsten Mask by Cathodoluminescence Microscopy and Micro-Raman Spectroscopy", Materials Science Forum, Vols. 338-342, pp. 1483-1486, 2000

Online since:

May 2000

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