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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Crack-Free, Single-Crystal GaN Grown on 100 mm...

Crack-Free, Single-Crystal GaN Grown on 100 mm Diameter Silicon

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1463-1466

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1463

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Online since:

May 2000

Authors:

H.M. Liaw, R. Venugopal, J. Wan, R. Doyle, P. Fejes, Mark J. Loboda, M.R. Melloch

Keywords:

Buffer Layer, Epitaxy, PL Spectra, TEM Images, Threading Dislocation, X-Ray Diffraction (XRD)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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