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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Lateral- and Pendeo-Epitaxial Growth and Defect...

Lateral- and Pendeo-Epitaxial Growth and Defect Reduction in GaN Thin Films

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1471-1476

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1471

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Online since:

May 2000

Authors:

Robert F. Davis, O.H. Nam, T.S. Zheleva, Thomas Gehrke, Kevin J. Linthicum, Pradeep Rajagopal

Keywords:

Inductively Coupled Etching, Lateral Epitaxial Overgrowth, LEO, MOVPE, Pendeo-Epitaxy, Scanning Electron Microscope (SEM), Silicon Nitride Mask, Thin Film Morphology

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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