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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342AlN Epitaxial Films Grown by ECR Plasma Assisted...

AlN Epitaxial Films Grown by ECR Plasma Assisted Metalorganic Chemical Vapor Deposition under Controlled Plasma Condition in Afterglow Region

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1511-1514

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1511

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Online since:

May 2000

Authors:

Kanji Yasui, S. Hoshino, Takashi Akahane

Keywords:

Aluminum Nitride (AlN), Electron Cyclotron Resonance Plasma, Epitaxial Growth, Mirror Field, MOCVD

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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