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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Static and Dynamic Characteristics of 4H-SiC JFETs...

Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1243-1246

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1243

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Online since:

May 2000

Authors:

Peter Friedrichs, Heinz Mitlehner, Rainer Kaltschmidt, Ulrich Weinert, Wolfgang Bartsch, Christian Hecht, Karl Otto Dohnke, Benno Weis, Dietrich Stephani

Keywords:

Device Simulation, Junction Field Effect Transistor (JFET), Mobility, Switching Characteristics, Temperature Dependence

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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