Vanadium-free Semi-insulating 4H-SiC Substrates
p.21
p.21
Numerical Simulation of SiC Boule Growth by Sublimation
p.25
p.25
Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth
p.31
p.31
An Analytical Study of the SiC Growth Process from Vapor Phase
p.35
p.35
Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
p.39
p.39
Experimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk Growth
p.43
p.43
Seed Surface Preparation for SiC Sublimation Growth
p.47
p.47
Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method
p.51
p.51
Thermal Decomposition Cavities in Physical Vapor Transport Grown SiC
p.55
p.55
Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
Abstract:
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Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
39-42
Citation:
Online since:
May 2000
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Сopyright:
© 2000 Trans Tech Publications Ltd. All Rights Reserved
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