Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

39-42

DOI:

10.4028/www.scientific.net/MSF.338-342.39

Citation:

T. L. Straubinger et al., "Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions", Materials Science Forum, Vols. 338-342, pp. 39-42, 2000

Online since:

May 2000

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Price:

$35.00

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