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An Analytical Study of the SiC Growth Process from Vapor Phase
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Global Numerical Simulation of Heat and Mass...

Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

31-34

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.31

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Online since:

May 2000

Authors:

M. Selder, L. Kadinski, F. Durst, Thomas L. Straubinger, Dieter Hofmann, Peter J. Wellmann

Keywords:

Global Heat Transfer, Mass Transfer, Numerical Modeling, Physical Vapor Transport, SiC Bulk Growth

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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