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Paper Titles
Preface and Overview
p.2
Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications
p.3
Large Diameter PVT Growth of Bulk 6H SiC Crystals
p.9
Progress in SiC Bulk Growth
p.13
Generation and Properties of Semi-Insulating SiC Substrates
p.17
Vanadium-free Semi-insulating 4H-SiC Substrates
p.21
Numerical Simulation of SiC Boule Growth by Sublimation
p.25
Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth
p.31
An Analytical Study of the SiC Growth Process from Vapor Phase
p.35

Generation and Properties of Semi-Insulating SiC Substrates

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

17-20

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.17

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Online since:

May 2000

Authors:

Shao Ping Wang, Adrian R. Powell, Joan M. Redwing, Eddie Piner, Adam W. Saxler

Keywords:

GaN Device on SI-SiC, Resistivity, Semi-insulating (SI), SiC Substrates

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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