Paper Titles

Committees and Sponsors
p.1

Preface and Overview
p.2

Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications
p.3

Large Diameter PVT Growth of Bulk 6H SiC Crystals
p.9

Progress in SiC Bulk Growth
p.13

Generation and Properties of Semi-Insulating SiC Substrates
p.17

Vanadium-free Semi-insulating 4H-SiC Substrates
p.21

Numerical Simulation of SiC Boule Growth by Sublimation
p.25

Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth
p.31

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Status of Large Diameter SiC Crystal Growth for...

Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

3-8

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.3

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Online since:

May 2000

Authors:

H. McD. Hobgood, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, Jason R. Jenny, R.T. Leonard, D.P. Malta, Stephan G. Müller, Valeri F. Tsvetkov, Calvin H. Carter Jr.

Keywords:

Absorption, Defect, Micropipe, Purity, Resistivity, Substrate, Thermal Conductivity (TC)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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