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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Vanadium-free Semi-insulating 4H-SiC Substrates

Vanadium-free Semi-insulating 4H-SiC Substrates

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

21-24

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.21

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Online since:

May 2000

Authors:

W.C. Mitchel, Adam W. Saxler, Ronald Perrin, Jonathan Goldstein, S.R. Smith, A.O. Evwaraye, J.S. Solomon, M.F. Brady, Valeri F. Tsvetkov, Calvin H. Carter Jr.

Keywords:

4H-SiC, Admittance Spectroscopy, Hall-Effect, Physical Vapor Transport, Semi-Insulating Material

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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