Monolayer Growth Modes of Re and Nb on the Polar Faces of 4H-SiC

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

423-426

DOI:

10.4028/www.scientific.net/MSF.338-342.423

Citation:

K.W. Bryant and M.J. Bozack, "Monolayer Growth Modes of Re and Nb on the Polar Faces of 4H-SiC", Materials Science Forum, Vols. 338-342, pp. 423-426, 2000

Online since:

May 2000

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$35.00

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