Paper Titles

Monolayer Growth Modes of Re and Nb on the Polar Faces of 4H-SiC
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Group-ΙΙΙ Adsorption and Bond Stacking on SiC(111) Surfaces
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Characterization of SiC using Synchrotron White Beam X-ray Topography
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Growth of Low Micropipe Density SiC Wafers
p.437

Investigation of the Origin of Micropipe Defect
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Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals
p.445

Origin of the Internal Stress Around the Micropipe of 6H-SiC Single Crystal
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Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes
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In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Investigation of the Origin of Micropipe Defect

Investigation of the Origin of Micropipe Defect

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

441-444

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.441

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Online since:

May 2000

Authors:

Atsuto Okamoto, Naohiro Sugiyama, Toshihiko Tani, Nobuo Kamiya

Keywords:

Cleavage Surface, Dislocation, Micropipe, Vickers Indenter

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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