Paper Titles

Group-ΙΙΙ Adsorption and Bond Stacking on SiC(111) Surfaces
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Characterization of SiC using Synchrotron White Beam X-ray Topography
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Growth of Low Micropipe Density SiC Wafers
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Investigation of the Origin of Micropipe Defect
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Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals
p.445

Origin of the Internal Stress Around the Micropipe of 6H-SiC Single Crystal
p.449

Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes
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In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography
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X-ray Topographic Study of SiC Crystal at High Temperature
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Analysis on the Formation and Elimination of...

Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

445-448

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.445

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Online since:

May 2000

Authors:

Dieter Hofmann, Matthias Bickermann, Wolfgang Hartung, Albrecht Winnacker

Keywords:

Macrodefects, Micropipe, Planar Defects

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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