Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

445-448

DOI:

10.4028/www.scientific.net/MSF.338-342.445

Citation:

D. Hofmann et al., "Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals", Materials Science Forum, Vols. 338-342, pp. 445-448, 2000

Online since:

May 2000

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$35.00

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