Paper Titles

Investigation of the Origin of Micropipe Defect
p.441

Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals
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Origin of the Internal Stress Around the Micropipe of 6H-SiC Single Crystal
p.449

Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes
p.453

In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography
p.457

X-ray Topographic Study of SiC Crystal at High Temperature
p.461

Synchrotron White Beam Topography Studies of 2H SiC Crystals
p.465

Synchrotron White Beam X-ray Topography and Atomic Force Microscopy Studies of a 540R-SiC Lely Platelet
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X-ray Characterization of 3 inch Diameter 4H and 6H-SiC Experimental Wafers
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342In-situ Observation of SiC Bulk Single Crystal...

In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.457

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Online since:

May 2000

Authors:

Tomohisa Kato, Naoki Oyanagi, Hirotaka Yamaguchi, Yukio Takano, Shin Ichi Nishizawa, Kazuo Arai

Keywords:

Defect, In Situ Observation, Modified Lely Method, X-Ray Topography

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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