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Origin of the Internal Stress Around the Micropipe of 6H-SiC Single Crystal
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Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes
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In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography
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X-ray Topographic Study of SiC Crystal at High Temperature
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Synchrotron White Beam Topography Studies of 2H SiC Crystals
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Synchrotron White Beam X-ray Topography and Atomic Force Microscopy Studies of a 540R-SiC Lely Platelet
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X-ray Characterization of 3 inch Diameter 4H and 6H-SiC Experimental Wafers
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Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Synchrotron White Beam Topography Studies of 2H...

Synchrotron White Beam Topography Studies of 2H SiC Crystals

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

465-468

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.465

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Online since:

May 2000

Authors:

Michael Dudley, W. Huang, William M. Vetter, Philip G. Neudeck, J. Anthony Powell

Keywords:

2H Polytype, Eshelby Twist, Pendellosung

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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