Paper Titles

Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes
p.453

In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography
p.457

X-ray Topographic Study of SiC Crystal at High Temperature
p.461

Synchrotron White Beam Topography Studies of 2H SiC Crystals
p.465

Synchrotron White Beam X-ray Topography and Atomic Force Microscopy Studies of a 540R-SiC Lely Platelet
p.469

X-ray Characterization of 3 inch Diameter 4H and 6H-SiC Experimental Wafers
p.473

Origin of Threading Dislocation Arrays in SiC Boules Grown by PVT
p.477

Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching
p.481

Polytype and Defect Control of Two Inch Diameter Bulk SiC
p.485

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Synchrotron White Beam X-ray Topography and Atomic...

Synchrotron White Beam X-ray Topography and Atomic Force Microscopy Studies of a 540R-SiC Lely Platelet

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

469-472

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.469

Citation:

Cite this paper

Online since:

May 2000

Authors:

William M. Vetter, Michael Dudley, W. Huang, Philip G. Neudeck, J. Anthony Powell

Keywords:

Gaseous Etching, Long-Repeat Polytype, Silicon Carbide (SiC), X-Ray Topography

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: