Paper Titles

Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals
p.445

Origin of the Internal Stress Around the Micropipe of 6H-SiC Single Crystal
p.449

Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes
p.453

In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography
p.457

X-ray Topographic Study of SiC Crystal at High Temperature
p.461

Synchrotron White Beam Topography Studies of 2H SiC Crystals
p.465

Synchrotron White Beam X-ray Topography and Atomic Force Microscopy Studies of a 540R-SiC Lely Platelet
p.469

X-ray Characterization of 3 inch Diameter 4H and 6H-SiC Experimental Wafers
p.473

Origin of Threading Dislocation Arrays in SiC Boules Grown by PVT
p.477

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342X-ray Topographic Study of SiC Crystal at High...

X-ray Topographic Study of SiC Crystal at High Temperature

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

461-464

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.461

Citation:

Cite this paper

Online since:

May 2000

Authors:

Hirotaka Yamaguchi, Naoki Oyanagi, Tomohisa Kato, Yukio Takano, Shin Ichi Nishizawa, Wook Bahng, Sadafumi Yoshida, Kazuo Arai

Keywords:

Crystal Growth, High-Temperature Topography, In Situ Observation, X-Ray Topography

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: