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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Structural Characterization of Silicon Carbide...

Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

481-484

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.481

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Online since:

May 2000

Authors:

T. Henkel, Gabriel Ferro, Shin Ichi Nishizawa, H. Pressler, Yasuhito Tanaka, Hisao Tanoue, Naoto Kobayashi

Keywords:

6H-SiC, Damage, Etching, Ion Implantation, Surface Morphology

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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