Paper Titles

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Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching
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Polytype and Defect Control of Two Inch Diameter Bulk SiC
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Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes
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Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray Diffractometry
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Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC
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High Order X-ray Diffraction and Internal Atomic Layer Roughness of Epitaxial and Bulk SiC Materials
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4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
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Structural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum Sublimation
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Investigation of Low Angle Grain Boundaries in...

Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray Diffractometry

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

493-496

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.493

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Online since:

May 2000

Authors:

Masakazu Katsuno, Noboru Ohtani, Takashi Aigo, Hirokatsu Yashiro, M. Kanaya

Keywords:

Defect Selective Etching, HRXRD, Low-Angle Grain Boundaries

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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