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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Correlation of EBIC and SWBXT Imaged Defects and...

Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

489-492

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.489

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Online since:

May 2000

Authors:

C.M. Schnabel, M. Tabib-Azar, Philip G. Neudeck, S.G. Bailey, H.B. Su, Michael Dudley, R.P. Raffaelle

Keywords:

Defect, Diffusion Length, Electron Beam Induced Current (EBIC), Epilayer Growth Pits, Recombination Centers, Screw Dislocations, Synchrotron White-Beam X-Ray Topography (SWBXT)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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