Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes
p.489
p.489
Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray Diffractometry
p.493
p.493
Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC
p.497
p.497
High Order X-ray Diffraction and Internal Atomic Layer Roughness of Epitaxial and Bulk SiC Materials
p.501
p.501
4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
p.505
p.505
Structural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum Sublimation
p.509
p.509
Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals
p.513
p.513
Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples
p.517
p.517
Void Shapes in the Si (111) Substrate at the Heteroepitaxial Thin Film / Si Interface
p.521
p.521
4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
505-508
Citation:
Online since:
May 2000
Keywords:
Price:
Сopyright:
© 2000 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: