4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

505-508

DOI:

10.4028/www.scientific.net/MSF.338-342.505

Citation:

E. V. Kalinina et al., "4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density", Materials Science Forum, Vols. 338-342, pp. 505-508, 2000

Online since:

May 2000

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$35.00

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