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4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
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Structural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum Sublimation
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Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals
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Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples
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Void Shapes in the Si (111) Substrate at the Heteroepitaxial Thin Film / Si Interface
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Defect Characterization in 3C-SiC Films Grown on Thin and Thick Silicon Top Layers of SIMOX
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Structural Characteristics of 3C-SiC Films Epitaxially Grown on the Si/Si₃N₄/SiO₂ System
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Stacking Fault Energy of 6H-SiC and 4H-SiC Single...

Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

513-516

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.513

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Online since:

May 2000

Authors:

Moon Hi Hong, A.V. Samant, P. Pirouz

Keywords:

4H-SiC, 6H-SiC, ANNNI Spin Model, Deformation, Dissociation Width, Stacking Fault Energy (SFE)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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