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Polytype and Defect Control of Two Inch Diameter Bulk SiC
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Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes
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Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray Diffractometry
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Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC
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High Order X-ray Diffraction and Internal Atomic Layer Roughness of Epitaxial and Bulk SiC Materials
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4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
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Structural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum Sublimation
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Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals
p.513

Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342High Order X-ray Diffraction and Internal Atomic...

High Order X-ray Diffraction and Internal Atomic Layer Roughness of Epitaxial and Bulk SiC Materials

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

501-504

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.501

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Online since:

May 2000

Authors:

G. Xu, Zhe Chuan Feng

Keywords:

Electron Density, Molybdenum Target, Structure Factor SF, X-Ray Diffraction (XRD)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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