Paper Titles

High Order X-ray Diffraction and Internal Atomic Layer Roughness of Epitaxial and Bulk SiC Materials
p.501

4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
p.505

Structural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum Sublimation
p.509

Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals
p.513

Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples
p.517

Void Shapes in the Si (111) Substrate at the Heteroepitaxial Thin Film / Si Interface
p.521

Defect Characterization in 3C-SiC Films Grown on Thin and Thick Silicon Top Layers of SIMOX
p.525

Structural Characteristics of 3C-SiC Films Epitaxially Grown on the Si/Si₃N₄/SiO₂ System
p.529

Illusion of New Polytypes
p.533

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Deformation Tests on 4H-SiC Single Crystals...

Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

517-520

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.517

Citation:

Cite this paper

Online since:

May 2000

Authors:

Jean Luc Demenet, Moon Hi Hong, P. Pirouz

Keywords:

4H-SiC, Partial Dislocations, Perfect Dislocation, Plasticity, Yield Stress

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: