Paper Titles

Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples
p.517

Void Shapes in the Si (111) Substrate at the Heteroepitaxial Thin Film / Si Interface
p.521

Defect Characterization in 3C-SiC Films Grown on Thin and Thick Silicon Top Layers of SIMOX
p.525

Structural Characteristics of 3C-SiC Films Epitaxially Grown on the Si/Si₃N₄/SiO₂ System
p.529

Illusion of New Polytypes
p.533

Microstructural, Optical and Electronic Investigation of Anodized 4H-SiC
p.537

Characterization of Polycrystalline SiC Grown on SiO₂ and Si₃N₄ by APCVD for MEMS Applications
p.541

Theory of Below Gap Absorption Bands in n-Type SiC Polytypes; Or, how SiC got its Colors
p.545

Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC
p.551

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Illusion of New Polytypes

Illusion of New Polytypes

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

533-536

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.533

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Online since:

May 2000

Authors:

Ute Kaiser, A. Chuvilin, W. Richter

Keywords:

Image Simulation, MBE Growth, Polytype, TEM

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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