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Defect Characterization in 3C-SiC Films Grown on Thin and Thick Silicon Top Layers of SIMOX
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Structural Characteristics of 3C-SiC Films Epitaxially Grown on the Si/Si₃N₄/SiO₂ System
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Illusion of New Polytypes
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Microstructural, Optical and Electronic Investigation of Anodized 4H-SiC
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Characterization of Polycrystalline SiC Grown on SiO₂ and Si₃N₄ by APCVD for MEMS Applications
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Theory of Below Gap Absorption Bands in n-Type SiC Polytypes; Or, how SiC got its Colors
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Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC
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Determination of the Polarization Dependence of the Free-Carrier-Absorption in 4H-SiC at High-Level Photoinjection
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Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Characterization of Polycrystalline SiC Grown on...

Characterization of Polycrystalline SiC Grown on SiO₂ and Si₃N₄ by APCVD for MEMS Applications

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

541-544

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.541

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Online since:

May 2000

Authors:

Chien-Hung Wu, Christian A. Zorman, Mehran Mehregany

Keywords:

Polycrystalline SiC, SiO₂

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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