Characterization of Polycrystalline SiC Grown on SiO2 and Si3N4 by APCVD for MEMS Applications

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

541-544

DOI:

10.4028/www.scientific.net/MSF.338-342.541

Citation:

C.-H. Wu et al., "Characterization of Polycrystalline SiC Grown on SiO2 and Si3N4 by APCVD for MEMS Applications", Materials Science Forum, Vols. 338-342, pp. 541-544, 2000

Online since:

May 2000

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$35.00

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