Microstructural, Optical and Electronic Investigation of Anodized 4H-SiC
p.537
p.537
Characterization of Polycrystalline SiC Grown on SiO2 and Si3N4 by APCVD for MEMS Applications
p.541
p.541
Theory of Below Gap Absorption Bands in n-Type SiC Polytypes; Or, how SiC got its Colors
p.545
p.545
Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC
p.551
p.551
Determination of the Polarization Dependence of the Free-Carrier-Absorption in 4H-SiC at High-Level Photoinjection
p.555
p.555
Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations
p.559
p.559
Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance
p.563
p.563
Differential Absorption Measurement of Valence Band Splittings in 4H SiC
p.567
p.567
Anisotropic Dielectric Function Properties of Semi-insulating 4H-SiC Determined from Spectroscopic Ellipsometry
p.571
p.571
Determination of the Polarization Dependence of the Free-Carrier-Absorption in 4H-SiC at High-Level Photoinjection
Abstract:
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Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
555-558
Citation:
Online since:
May 2000
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Сopyright:
© 2000 Trans Tech Publications Ltd. All Rights Reserved
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