Paper Titles

Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC
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Determination of the Polarization Dependence of the Free-Carrier-Absorption in 4H-SiC at High-Level Photoinjection
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Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations
p.559

Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance
p.563

Differential Absorption Measurement of Valence Band Splittings in 4H SiC
p.567

Anisotropic Dielectric Function Properties of Semi-insulating 4H-SiC Determined from Spectroscopic Ellipsometry
p.571

Optical Characterization of 4H-SiC by Variable Angle of Incidence Spectroscopic Ellipsometry
p.575

Isotope Effects on the Raman Spectrum of SiC
p.579

Disappearance of the LO-Phonon Line in the UV-Raman Spectrum of 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Differential Absorption Measurement of Valence...

Differential Absorption Measurement of Valence Band Splittings in 4H SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

567-570

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.567

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Online since:

May 2000

Authors:

S.G. Sridhara, Song Bai, O. Shigiltchoff, Robert P. Devaty, Wolfgang J. Choyke

Keywords:

Absorption, Band Structure, Crystal Field Splitting, Spin-Orbit Splitting, Valence Bands

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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