Paper Titles

Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations
p.559

Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance
p.563

Differential Absorption Measurement of Valence Band Splittings in 4H SiC
p.567

Anisotropic Dielectric Function Properties of Semi-insulating 4H-SiC Determined from Spectroscopic Ellipsometry
p.571

Optical Characterization of 4H-SiC by Variable Angle of Incidence Spectroscopic Ellipsometry
p.575

Isotope Effects on the Raman Spectrum of SiC
p.579

Disappearance of the LO-Phonon Line in the UV-Raman Spectrum of 6H-SiC
p.583

Selectively Resonant Raman Spectra of Folded Phonon Modes in SiC
p.587

Raman Spectral Profiles of Folded Longitudinal Modes in SiC under Off-resonant Condition
p.591

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Optical Characterization of 4H-SiC by Variable...

Optical Characterization of 4H-SiC by Variable Angle of Incidence Spectroscopic Ellipsometry

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

575-578

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.575

Citation:

Cite this paper

Online since:

May 2000

Authors:

O.P. Alexander Lindquist, H. Arwin, Urban Forsberg, Peder Bergman, K. Järrendahl

Keywords:

Doping, Ellipsometry, SiC Dielectric Function

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: