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Theory of Below Gap Absorption Bands in n-Type SiC Polytypes; Or, how SiC got its Colors
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Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC
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Determination of the Polarization Dependence of the Free-Carrier-Absorption in 4H-SiC at High-Level Photoinjection
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Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations
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Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance
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Differential Absorption Measurement of Valence Band Splittings in 4H SiC
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Anisotropic Dielectric Function Properties of Semi-insulating 4H-SiC Determined from Spectroscopic Ellipsometry
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Optical Characterization of 4H-SiC by Variable Angle of Incidence Spectroscopic Ellipsometry
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Isotope Effects on the Raman Spectrum of SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Hole Effective Masses in 4H SiC Determined by...

Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

563-566

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.563

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Online since:

May 2000

Authors:

Nguyen Tien Son, P.N. Hai, W.M. Chen, Christer Hallin, Bo Monemar, Erik Janzén

Keywords:

Hole Effective Masses, Optically Detected Cyclotron Resonance

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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