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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Bandstructure and Transport Properties of 4H- and...

Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

559-562

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.559

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Online since:

May 2000

Authors:

B.K. Meyer, D.M. Hofmann, D. Volm, W.M. Chen, Nguyen Tien Son, Erik Janzén

Keywords:

Band Structure, Carrier Scattering, Cyclotron Resonance, Effective Mass, Silicon Carbide (SiC)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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