Differential Absorption Measurement of Valence Band Splittings in 4H SiC
p.567
p.567
Anisotropic Dielectric Function Properties of Semi-insulating 4H-SiC Determined from Spectroscopic Ellipsometry
p.571
p.571
Optical Characterization of 4H-SiC by Variable Angle of Incidence Spectroscopic Ellipsometry
p.575
p.575
Isotope Effects on the Raman Spectrum of SiC
p.579
p.579
Disappearance of the LO-Phonon Line in the UV-Raman Spectrum of 6H-SiC
p.583
p.583
Selectively Resonant Raman Spectra of Folded Phonon Modes in SiC
p.587
p.587
Raman Spectral Profiles of Folded Longitudinal Modes in SiC under Off-resonant Condition
p.591
p.591
Raman Spectroscopy on Biaxially Strained Epitaxial Layers of 3C-SiC on Si
p.595
p.595
Characterization of 3C-SiC/SOI Deposited with HMDS
p.599
p.599
Disappearance of the LO-Phonon Line in the UV-Raman Spectrum of 6H-SiC
Abstract:
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Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
583-586
Citation:
Online since:
May 2000
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© 2000 Trans Tech Publications Ltd. All Rights Reserved
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