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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Characterization of 3C-SiC/SOI Deposited with HMDS

Characterization of 3C-SiC/SOI Deposited with HMDS

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

599-602

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.599

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Online since:

May 2000

Authors:

N. Planes, P. Dupel, M. Ravetz, Sylvie Contreras, Patrice Vicente, Thierry Chassagne, B. Fraisse, Jean Camassel, Yves Monteil, S. Rushworth

Keywords:

Cubic Silicon Carbide (3C-SiC), HMDS, SOI Substrates

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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