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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Characterization of Silicon Carbide using Raman...

Characterization of Silicon Carbide using Raman Spectroscopy

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

615-618

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.615

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Online since:

May 2000

Authors:

J.C. Burton, F.H. Long, Yuri I. Khlebnikov, I.I. Khlebnikov, Mathew Parker, Tangali S. Sudarshan

Keywords:

Electronic Raman Scattering, Lateral Epitaxial Overgrowth, Nitrogen Doping

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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