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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Sub-μm Scale Photoluminescence Image of SiC and...

Sub-μm Scale Photoluminescence Image of SiC and GaN at a Low Temperature

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

627-630

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.627

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Online since:

May 2000

Authors:

Masahiro Yoshimoto, Motoki Goto, Junji Saraie, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

Defect, Donor-Acceptor Pairs, Excitonic Emission, Impurity, Non-Radiative Recombination, Photoluminescence Image, Polytypism, Submicron Resolution

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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