Paper Titles

Photoluminescence Study of CVD Layers Highly Doped with Nitrogen
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Low Temperature Photoluminescence of ¹³C Enriched SiC-Crystals Grown by the Modified Lely Method
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Sub-μm Scale Photoluminescence Image of SiC and GaN at a Low Temperature
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Vanadium-related Center in 4H Silicon Carbide
p.631

Spectroscopic Investigation of Vanadium Acceptor Level in 4H and 6H-SiC
p.635

Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC
p.639

Electronic States of Vacancies in 3C- and 4H-SiC
p.643

Pseudo-Donors in SiC
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Metastability of a Hydrogen-related Defect in 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Spectroscopic Investigation of Vanadium Acceptor...

Spectroscopic Investigation of Vanadium Acceptor Level in 4H and 6H-SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

635-638

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.635

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Online since:

May 2000

Authors:

V. Lauer, G. Brémond, A. Souifi, Gérard Guillot, K. Chourou, Roland Madar, B. Clerjaud

Keywords:

DLOS, Optical Absorption, Vanadium

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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