Paper Titles

Vanadium-related Center in 4H Silicon Carbide
p.631

Spectroscopic Investigation of Vanadium Acceptor Level in 4H and 6H-SiC
p.635

Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC
p.639

Electronic States of Vacancies in 3C- and 4H-SiC
p.643

Pseudo-Donors in SiC
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Metastability of a Hydrogen-related Defect in 6H-SiC
p.651

Optical Characterization of Lattice Damage and Recovery in Ion-Implanted and Pulsed Excimer Laser Irradiated 4H-SiC
p.655

Microscopic Probing of Raman Scattering and Photoluminescence on C-Al Ion Co-Implanted 6H-SiC
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Confocal Raman Microprobe of Lattice Damage in N⁺ Implanted 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Pseudo-Donors in SiC

Pseudo-Donors in SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

647-650

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.647

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Online since:

May 2000

Authors:

T. Egilsson, Ivan G. Ivanov, Anne Henry, Erik Janzén

Keywords:

Bound Exciton, Defect, Photoluminescence (PL)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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