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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Electronic States of Vacancies in 3C- and 4H-SiC

Electronic States of Vacancies in 3C- and 4H-SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

643-646

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.643

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Online since:

May 2000

Authors:

A. Zywietz, J. Furthmüller, Friedhelm Bechstedt

Keywords:

Defect, Electronic Structure, Luminescence, Spin Polarization, Vacancy

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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