Vanadium-related Center in 4H Silicon Carbide

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

631-634

DOI:

10.4028/www.scientific.net/MSF.338-342.631

Citation:

B. Magnusson et al., "Vanadium-related Center in 4H Silicon Carbide", Materials Science Forum, Vols. 338-342, pp. 631-634, 2000

Online since:

May 2000

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Price:

$35.00

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