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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Photoluminescence Study of CVD Layers Highly Doped...

Photoluminescence Study of CVD Layers Highly Doped with Nitrogen

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

619-622

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.619

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Online since:

May 2000

Authors:

Urban Forsberg, Anne Henry, Margareta K. Linnarsson, Erik Janzén

Keywords:

Mott Transition, n-Type Doping, Photoluminescence (PL)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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