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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Shallow Nitrogen Donor States in 4H-SiC...

Shallow Nitrogen Donor States in 4H-SiC Investigated by Photothermal Ionization Spectroscopy

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

611-614

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.611

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Online since:

May 2000

Authors:

C.Q. Chen, Jan Zeman, F. Engelbrecht, Christian Peppermüller, Reinhard Helbig, G. Martinez

Keywords:

FT-IR, Magnetospectroscopy, PTIS, Shallow Nitrogen Donor

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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