Paper Titles

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Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC
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Electronic States of Vacancies in 3C- and 4H-SiC
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Pseudo-Donors in SiC
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Metastability of a Hydrogen-related Defect in 6H-SiC
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Optical Characterization of Lattice Damage and Recovery in Ion-Implanted and Pulsed Excimer Laser Irradiated 4H-SiC
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Microscopic Probing of Raman Scattering and Photoluminescence on C-Al Ion Co-Implanted 6H-SiC
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Confocal Raman Microprobe of Lattice Damage in N⁺ Implanted 6H-SiC
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Ion Beam Induced Change in the Linear Optical Properties of SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Metastability of a Hydrogen-related Defect in...

Metastability of a Hydrogen-related Defect in 6H-SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

651-654

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.651

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Online since:

May 2000

Authors:

Anne Henry, T. Egilsson, Ivan G. Ivanov, Erik Janzén

Keywords:

Hydrogen, Metastability, Photoluminescence (PL)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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