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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Thermal Annealing Effect on TiN/Ti Layers on...

Thermal Annealing Effect on TiN/Ti Layers on 4H-SiC: Metal-Semiconductor Interface Characterization

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

411-414

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.411

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Online since:

May 2000

Authors:

D. Defives, O. Durand, F. Wyczisk, J. Olivier, Olivier Noblanc, Christian Brylinski

Keywords:

AES, Annealing, Interfacial Layer, Metal/SiC, Reflectivity, TEM, X-Ray Diffraction (XRD)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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