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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Initial Oxidation of the Si-terminated...

Initial Oxidation of the Si-terminated 6H-SiC(0001) 3x3 Surface

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

395-398

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.395

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Online since:

May 2000

Authors:

F. Amy, Y. Hwu, Christian Brylinski, P. Soukiassian

Keywords:

Core Level Photoemission, Interface, Oxidation, Surface, Synchrotron Radiation (XRD)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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